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Thin films of Tellurium dioxide (TeO2) were investigated for ÃŽÂ³-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co ÃŽÂ³-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and ÃŽÂ³-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time ÃŽÂ³-radiation dosimetry

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures