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Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS 2 /p-Si heterojunction structure by sulfurization of MoO x film, which is thermally evaporated on p-type silicon substrate. The n-MoS 2 /p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 10 4 . Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 10 11 Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS 2 can be applicable to next-generation electronic and optoelectronic devices.

Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process