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A modulator is the core of many optoelectronic applications such as communication and sensing. However, a traditional modulator can hardly reach high modulation depth. In order to achieve the higher modulation depth, a graphene electro-optical switch modulator is proposed by adjusting propagation length in the near infrared band. The switch modulator is designed based on a hybrid plasmonic waveguide structure, which is comprised of an SiO 2 substrate, graphene-Si-graphene heterostructure, Ag nanowire and SiO 2 cladding. The propagation length of the hybrid plasmonic waveguide varies from 0.14 μm to 20.43 μm by the voltage tunability of graphene in 1550 nm incident light. A modulator with a length of 3 μm is designed based on the hybrid waveguide and it achieves about 100% modulation depth. The lower energy loss (~1.71 fJ/bit) and larger 3 dB bandwidth (~83.91 GHz) are attractive for its application in a photoelectric integration field. In addition, the excellent robustness (error of modulation effects lower than 8.84%) is practical in the fabrication process. Most importantly, by using the method of adjusting propagation length, other types of graphene modulators can also achieve about 100% modulation depth.

Graphene Electro-Optical Switch Modulator by Adjusting Propagation Length Based on Hybrid Plasmonic Waveguide in Infrared Band