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We investigated the effect of silver catalysts to enhance the growth of Ga 2 O 3  nanowires. The growth of Ga 2 O 3  nanowires on a P + -Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga 2 O 3  nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga 2 O 3  nanowires can be grown directly on the surface of silicon. The Ga 2 O 3  nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse.

The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector