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In this study, electrical characteristics of MoTe 2 field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe 2 crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe 2 channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe 2 FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH 3 ) sensing, which confirms the p- and n-type behavior of MoTe 2 devices.

Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications