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A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors ( R L  ₁, R L  ₂, R L  ₃ and R L  ₄). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields' component ( B x  and B y  ) along the x -axis and y -axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type &lt;100&gt; orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the V  CE = 5.0 V and I B  = 8.0 mA, the magnetic sensitivities ( S xx  and S yy  ) along the x -axis and the y -axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (  B  ) in the xy plane, but also that S xx  and S yy  exhibit good uniformity.

sensors

Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors