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Guidelines for the fabrication of nanoscale light-emitting diode arrays (i.e., nanoLED arrays) based on patterned gallium nitride (GaN) with very small dimensions and pitches have been derived in this work. Several challenges during top-down LED array processing have been tackled involving hybrid etching and polymer-based planarization to yield completely insulated highaspect-ratio LED fin structures and support the creation of p-GaN crossing line contacts, respectively. Furthermore, simulations of the light emission patterns were also performed providing hints for enhancing the device designs. As a result, regardless of the required device processing optimization, the developed nanoLED arrays are expected to offer high potential as novel illumination sources in biomedical imaging and sensing applications (e.g., mini compact microscopes and wearable biological/chemical nanoparticle counters)

InGaN/GaN nanoLED Arrays as a Novel Illumination Source for Biomedical Imaging and Sensing Applications