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Ozone, a strong oxidizing gas, has dramatically increased its concentration in the troposphere during the last decades. Since high O3 concentrations are hazardous to human health, the development of effective methods and economic devices to detect this gas is an urgent need. In this frame, In2O3 is well known as an n-type ozone sensitive and selective material, generally displaying its optimal sensing capability in the temperature range 200-350 °C. To enhance the sensing capability of In2O3 and to decrease its operative temperature, in this work, commercial In2O3 powders were doped with 2.5 wt. % WO3. Pure and doped-In2O3 materials were used to develop sensing devices by screen-printing technology. Resistance measurements were performed in the temperature range 25 °C-150 °C under 200-500 ppb O3. Best results were obtained at 75 °C with sensor's responses as high as 40 under 200 ppb of ozone

WO3-Doped Indium Oxide Thick Films for Ozone Detection at Low Temperature