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In the present work, the optical and morphological properties of Porous Silicon (PSi) in the c-Si-n/PSi and c-Si-n/SiP-n/MWCNT/SiOx structures are studied and analyzed. The PSi layer is grown on n-type c-Si ( ) by electrochemical anodization using different currents as: 10, 50 and 100 mA. The etching solution used was C2H6O:HF:C3H8O3 in a proportion of 6:3:1 by volume, respectively. The deposition of multi wall carbon nanotubes (MWNTs) on the PSi was done by spin coating, and later the surface was passivated by thermal oxidation. The porosity and thickness were obtained by gravimetry. UV-VIS spectroscopy and photoluminescence were used to obtain the optical properties and SEM was used to analyze the morphology.

Optical and Morphological Analysis of c-Si/PSi and c-Si/PSi/MWCNT/SiOx Heterostructures