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The influence of semiconductor particle concentration and photoexcitation on the electrical and ferroelectric properties of ferroelectric-semiconductor-composites was investigated. For this purpose, 32 µm thin films of poly(vinylidene fluoride- co -trifluoroethylene) with (Cd:Zn)S particle concentrations of between 0 and 20 vol % were fabricated and characterized by scanning electron microscopy, Fourier transformed infrared spectroscopy, X-ray diffraction, and optical spectroscopy. It was shown that the particle concentration has only a negligible influence on the molecular structure of the polymer but strongly determines the optical properties of the composite. For (Cd:Zn)S particle concentrations below 20 vol %, the I-V characteristics of the composites is only marginally affected by the particle concentration and the optical excitation of the composite material. On the contrary, a strong influence of both parameters on the ferro- and pyroelectric properties of the composite films was observed. For particle fractions that exhibit ferroelectric hysteresis, an increased remanent polarization and pyroelectric coefficient due to optical excitation was obtained. A theoretical approach that is based on a "three phase model" of the internal structure was developed to explain the observed results.

Effect of (Cd:Zn)S Particle Concentration and Photoexcitation on the Electrical and Ferroelectric Properties of (Cd:Zn)S/P(VDF-TrFE) Composite Films