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Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce advanced nanoelectronics. The further development of EUVL is heavily based on implementing the so-called high numerical aperture (NA) EUVL, which will enable even smaller pitches up to 8 nm half pitch (HP). In anticipation of this high NA technology, it is crucial to assess the readiness of the current resist materials for the high NA regime to comply with the demanding requirements of resolution, line-edge roughness, and sensitivity (RLS). The achievable tighter pitches require lower film thicknesses for both resist and underlying transfer layers. A concern that is tied to the thinning down is the potential change in resist properties and behavior due to the interaction with the underlayer. To increase the fundamental understanding of ultra-thin films for high NA EUVL, a method to investigate the interplay of reduced film thickness and different patterning-relevant underlayers is developed by looking at the glass transition temperature (T g ) of polymer-based resists. To minimize the ambiguity of the results due to resist additives (i.e., photoacid generator (PAG) and quencher), it was opted to move forward with polymer-only samples, the main component of the resist, at this stage of the investigation. By using dielectric response spectroscopy, the results obtained show that changing the protection group of the polymer, as well as altering the polymer film thickness impacts the dynamics of the polymer mobility, which can be assessed through the T g  of the system. Unexpectedly, changing the underlayer did not result in a clear change in the polymer mobility at the tested film thicknesses.

Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography