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In this study, we developed polymer gate insulator-based organic phototransistors (p-OPTs) with improved optical switching properties by using a hybrid gate insulator configuration. The hybrid gate insulator of our p-OPT has a photoresponsive layer made of poly(4-vinylphenol) (PVP), which enhances the photoresponse, and an interfacial layer of poly(methyl methacrylate) for reliable optical switching of the device. Our hybrid gate insulator-equipped p-OPT exhibits well-defined optical switching characteristics because no specific type of charge is significantly trapped at an interfacial layer/organic semiconductor (OSC) interface. Moreover, our device is more photoresponsive than the conventional p-OPT (here, an OPT with a single-polymer poly(methyl methacrylate) (PMMA) gate insulator), because the characteristic ultraviolet (UV) absorption of the PVP polymer allows the photoresponsive layer and OSC to contribute to the generation of charge carriers when exposed to UV light.

Enhanced Optical Switching Characteristics of Organic Phototransistor by Adopting Photo-Responsive Polymer in Hybrid Gate-Insulator Configuration