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This study involves the results of research on short-term and long-term DC-drifts in electro-optical modulators based on annealed proton exchange waveguides in LiNbO3 crystals after wafer pre-annealing. The relaxation time of the DC-drift of the operating point for a short-term drift is measured in minutes, and for a long-term drift it is measured in hours and days. DC-drift was measured by applying bias voltage and changing crystal temperature. The obtained results show significant impact on the stability of operating point in EO-modulators after treatment of defective structure of the near-surface layer of a LiNbO3 crystal. Treatment of the disturbed near-surface layer of a LiNbO3 crystal results in the simultaneous reduction in short-term DC-drift and increase in operation stability of electro-optical modulators during long-term measurement of temperature by activation energy calculation.

Reduction in DC-Drift in LiNbO3-Based Electro-Optical Modulator