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In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by combined Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) techniques. The thermal characteristics of lasers are investigated by Charge-Coupled Device CCD thermoreflectance. This method allows for the fast and accurate registration of high-resolution temperature maps of the whole device. We observe different heat dissipation mechanisms for investigated geometries of Quantum Cascade Lasers (QCLs). From the thermal point of view, the preferred design is the buried heterostructure. The buried heterostructures structure and epi-layer down mounting help dissipate the heat generated from active core of the QCL. The experimental results are in very good agreement with theoretical predictions of heat dissipation in various device constructions

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance