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This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi 2 Se 3 and Sb 2 Te 3 ). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi 2 Se 3 or Sb 2 Te 3 . When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi 2 Se 3 /Si and Sb 2 Te 3 /Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi 2 Se 3 /Si junction, and of 15.5% with a 0.8 ms response time for the Sb 2 Te 3 /Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi 2 Se 3 (Sb 2 Te 3 )/Si heterojunctions can serve as monochromatic NIR photodetectors.

Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions