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In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure.

Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode