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In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS 2 semiconductors on a flexible substrate using a 25-μm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS 2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 μm, which consisted of about 10 MoS 2 layers. MoS 2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS 2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS 2 . Our approach can be applied for MoS 2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.

Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate