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In the last few years, interest in the use of gallium oxide (Ga 2 O 3 ) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga 2 O 3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga 2 O 3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga 2 O 3 thin film and nanowires for UV detection . The proposed process can be optimized to a high scale production Ga 2 O 3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.

Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst