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Graphene-based devices are planned to augment the functionality of Si andIII-V based technology in radio-frequency (RF) electronics. The expectations indesigning graphene {field-effect} transistors (GFETs) with enhanced RFperformance have attracted significant experimental efforts, mainlyconcentrated on achieving high mobility samples. However, little attention hasbeen paid, so far, to the role of the access regions in these devices.\mbox{Here, we analyse} in detail, via numerical simulations, how the GFETtransfer response is severely impacted by these regions, showing that they playa significant role in the asymmetric saturated behaviour commonly observed inGFETs. We also investigate how the modulation of the access region conductivity(i.e., by the influence of a back gate) and the presence of imperfections inthe graphene layer (e.g., charge puddles) affects the transfer response. Theanalysis is extended to assess the application of GFETs for RF applications,by~evaluating their cut-off frequency.

GFET Asymmetric Transfer Response Analysis through Access Region Resistances