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We fabricated a complex transparent conductive electrode (TCE) based on Ga₂O₃ for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga₂O₃, a 7 nm Ag, and a 15 nm Ga₂O₃, forming a ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer. The metal layer embedded into Ga₂O₃ and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10 -3 Ω·cm² with suitable annealing conditions.

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode