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We study the effect of polymer coating, pressure and temperature on theelectrical characteristics of monolayer WSe2 back-gated transistors withquasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methylmethacrylate) or decreasing the pressure change the device conductivity from pto n-type. We study the current-voltage characteristics as a function of thetemperature and measure a gate-tunable Schottky barrier at the contacts with aheight of 60 meV in flat-band condition. We report and discuss a change in themobility and the subthreshold slope observed with increasing temperature.Finally, we estimate the trap density at the WSe2/SiO2 interface and study thespectral photoresponse of the device, achieving a responsivity of 0.5 AW^-1 at700 nm wavelength and 0.37 mWcm^-2 optical power.

Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors