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Superconducting nanowires undergoing quantum phase-slips have potential forimpact in electronic devices, with a high-accuracy quantum current standardamong a possible toolbox of novel components. A key element of developing suchtechnologies is to understand the requirements for, and control the productionof, superconducting nanowires that undergo coherent quantum phase-slips. Wepresent three fabrication technologies, based on using electron-beamlithography or neon focussed ion-beam lithography, for defining narrowsuperconducting nanowires, and have used these to create nanowires in niobiumnitride with widths in the range of 20-250 nm. We present characterisation ofthe nanowires using DC electrical transport at temperatures down to 300 mK. Wedemonstrate that a range of different behaviours may be obtained in differentnanowires, including bulk-like superconducting properties with critical-currentfeatures, the observation of phase-slip centres and the observation of zeroconductance below a critical voltage, characteristic of coherent quantumphase-slips. We observe critical voltages up to 5 mV, an order of magnitudelarger than other reports to date. The different prominence of quantumphase-slip effects in the various nanowires may be understood as arising fromthe differing importance of quantum fluctuations. Control of the nanowireproperties will pave the way for routine fabrication of coherent quantumphase-slip nanowire devices for technology applications.

Emergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies