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We fabricated 70 nm Al 2 O 3  gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al 2 O 3 /Si substrate is superior to that on a traditional 300 nm SiO 2 /Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al 2 O 3 /Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS 2 , and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials