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In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-doped GaN thin films on interfacial designed sapphire substrates. The scattering cross-section of the periodic resonant structure was evaluated by using the finite difference time domain (FDTD) method and was found to be beneficial for reducing the threshold and enhancing the resonant lasing emission within the periodic structures. Compared with undoped and Si-doped GaN thin films, p-type Mg-doped GaN thin films demonstrated a better lasing emission performance. The lasing energy level system and defect densities played vital roles in the lasing emission. This work is beneficial to the realization of multifunctional applications in optoelectronic devices.

Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates