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In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel material with a highly compressive strain. Two etching methods, the wet etching and in situ HCl dry etching methods, were studied to achieve a better etching topography. In addition, the selective epitaxial growth of Ge material was performed on a patterned substrate using reduced pressure chemical vapor deposition. The results show that a V-shaped structure formed at the bottom of the dummy Si-fins using the wet etching method, which is beneficial to the suppression of dislocations. In addition, compressive strain was introduced to the Ge channel after the Ge selective epitaxial growth, which benefits the pMOS transport characteristics. The pattern dependency of the Ge growth over the patterned wafer was measured, and the solutions for uniform epitaxy are discussed.

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs