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In this study, we prepared Na-doped Cu 2 ZnSn(S,Se) 4 [noted as (Na 0.1 Cu 0.9 ) 2 ZnSn(S,Se) 4 ] films on the Mo substrate using a simple and cheap sol-gel method together with the post-annealing technique. The effects of selenization temperature on the properties of Na-doped Cu 2 ZnSn(S,Se) 4 were surveyed. The results indicated that some sulfur atoms in the films were substituted by selenium atoms by increasing the selenization temperature, and all films selenized at different temperatures had a kesterite structure. As the selenization temperature increased from 520 to 560 °C, the band gaps of the film can be tuned from 1.03 to 1 eV. The film with better morphology and opto-electrical properties can be obtained at an intermediate selenization temperature range (e.g., 540 °C), which had the lowest resistivity of 47.7 Ω cm, Hall mobility of 4.63 × 10 -1 cm 2 /Vs, and carrier concentration of 2.93 × 10 17 cm -3 . Finally, the best power conversion efficiency (PCE) of 4.82% was achieved with an open circuit voltage (Voc) of 338 mV, a short circuit current density (Jsc) of 27.16 mA/cm 2 and a fill factor (FF) of 52.59% when the selenization temperature was 540 °C.

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A Study on the Effects of Selenization Temperature on the Properties of Na-Doped Cu2ZnSn(S,Se)4 Thin Film and Its Correlation with the Performance of Solar Cells