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We report the growth, structural and magnetic properties of the less studiedEu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate andSi/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scansshow that highly-textured crystalline Eu$_3$O$_4$(001) films are grown on bothsubstrates, whereas the film deposited on graphene has a better crystallinitythan that grown on the Si/SiO$_2$ substrate. The SQUID measurements show thatboth films have a Curie temperature of about 5.5 K, with a magnetic moment of0.0032 emu/g at 2 K. The mixed-valency of the Eu cations has been confirmed bythe qualitative analysis of the depth-profile X-ray photoelectron spectroscopymeasurements with the Eu$^{2+}$ : Eu$^{3+}$ ratio of 28 : 72. However,surprisingly, our films show no metamagnetic behaviour as reported for the bulkand powder form. Furthermore, the Raman spectroscopy scans show that the growthof the Eu$_3$O$_4$ thin films has no damaging effect on the underlayer graphenesheet. Therefore, the graphene layer is expected to retain its properties.

Growth and Characterisation Studies of Eu$_3$O$_4$ Thin Films Grown on Si/SiO$_2$ and Graphene