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Photodetectors and display backplane transistors based on molybdenum disulfide (MoS 2 ) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS 2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS 2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS 2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS 2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS 2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS 2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS 2 TFTs. Transfer and output characteristics of the MoS 2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS 2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.

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Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors