English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiN x RRAM device is realized via arsenic ion (As + ) implantation. Besides, the As + -implanted SiN x RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As + -implanted SiN x device further exhibits excellent performance, which shows high stability and a large 1.73 × 10 3 resistance window at 85 °C retention for 10 4 s, and a large 10 3 resistance window after 10 5 cycles of the pulsed endurance test. The current-voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiN x layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As + implantation that leads to low forming and operation power.

Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation