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In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of0.96  /μ  m    2within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of3  ±     0.08      GHz, the second-order correlation factorg  2    (  τ  )   =  0.0322     ±  0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate