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Film stress and refractive index play an important role in the fabrication of suspended waveguides. SiO 2 waveguides were successfully fabricated on multiple substrates including Si, Ge, and Al 2 O 3 wafers; the waveguides were deposited using inductively coupled plasma chemical vapor deposition at 100 °C. The precursor gases were SiH 4 and N 2 O at 1:3 and 1:9 ratios with variable flow rates. The occurrence of intrinsic stress was validated through the fabrication of suspended SiO 2 bridges, where the curvature of the bridge corresponded to measured intrinsic stress, which measured less than 1 µm thick and up to 50 µm in length. The flow rates allow film stress tunability between 50 and -65 MPa, where a negative number indicates a compressive state of the SiO 2 . We also found that the gas ratios have a slight influence on the refractive index in the UV and visible range but do not affect the stress in the SiO 2 bridges. To test if this method can be used to produce multi-layer devices, three layers of SiO 2 bridges with air cladding between each bridge were fabricated on a silicon substrate. We concluded that a combination of low temperature deposition (100 °C) and photoresist as the sacrificial layer allows for versatile SiO 2 bridge fabrication that is substrate and refractive index independent, providing a framework for future tunable waveguide fabrication.

Stress and Refractive Index Control of SiO2 Thin Films for Suspended Waveguides