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We show that the density of indium islands on GaAs(111)A substrates have anon-monotonic, reentrant behavior as a function of the indium depositiontemperature. The expected increase in the density with decreasing temperature,indeed, is observed only down to 160 {\deg}C, where the indium islandsundertake the expected liquid-to-solid phase transition. Further decreasing thetemperature causes a sizeable reduction of the island density. An additional,reentrant increasing behavior is observed below 80 {\deg}C. We attribute theabove complex behavior to the liquid-solid phase transition and to the complexisland-island interaction which takes place between crystalline islands in thepresence of strain. Indium solid islands grown at temperatures below 160{\deg}C have a face-centered cubic crystal structure.

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A