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Niobium (Nb) thin films, which are potentially useful for integration into electronics and optoelectronics, were made by radio-frequency magnetron sputtering by varying the substrate temperature. The deposition temperature ( Ts ) effect was systematically studied using a wide range, 25-700 °C, using Si(100) substrates for Nb deposition. The direct correlation between deposition temperature ( Ts ) and electrical properties, surface/interface microstructure, crystal structure, and morphology of Nb films is reported. The Nb films deposited at higher temperature exhibit a higher degree of crystallinity and electrical conductivity. The Nb films' crystallite size varied from 5 to 9 (±1) nm and tensile strain occurs in Nb films as Ts increases. The surface/interface morphology of the deposited Nb films indicate the grain growth and dense, vertical columnar structure at elevated Ts . The surface roughness derived from measurements taken using atomic force microscopy reveal that all the Nb films are characteristically smooth with an average roughness &lt;2 nm. The lowest electrical resistivity obtained was 48 µΩ cm. The correlations found here between growth conditions electrical properties as well as crystal structure, surface/interface morphology, and microstructure, could provide useful information for optimum conditions to produce Nb thin films for utilization in electronics and optoelectronics.

Correlation between Crystal Structure, Surface/Interface Microstructure, and Electrical Properties of Nanocrystalline Niobium Thin Films