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A horizontally aligned GaAs p-i-n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period of 5 radius, more than twice that of its thin-film counterpart with the same thickness. To further enhance the absorption, the nanowire array is placed on a low-refractive-index MgF 2 substrate and capsulated in SiO 2 , which enables multiple reflection and reabsorption of light due to the refractive index difference between air/SiO 2 and SiO 2 /MgF 2 . The absorption-enhancement structure increases the absorption over a broad wavelength range, resulting in a maximum conversion efficiency of 18%, 3.7 times higher than that of the thin-film counterpart, which is 3 times larger in GaAs material volume. This work may pave the way for the development of ultra-thin high-efficiency solar cells with very low material cost.

Absorption-Enhanced Ultra-Thin Solar Cells Based on Horizontally Aligned p–i–n Nanowire Arrays