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In two-dimensional materials research, oxidation is usually considered as acommon source for the degradation of electronic and optoelectronic devices oreven device failure. However, in some cases a controlled oxidation can open thepossibility to widely tune the band structure of 2D materials. In particular,we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), alayered semiconductor that has attracted much attention recently thanks to itsquasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1eV. Heating TiS$_3$ in air above 300 {\deg}C gradually converts it intoTiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications inphoto-electrochemistry and catalysis. In this work, we investigate thecontrolled thermal oxidation of individual TiS$_3$ nanoribbons and itsinfluence on the optoelectronic properties of TiS$_3$-based photodetectors. Weobserve a step-wise change in the cut-off wavelength from its pristine value~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermaltreatment cycles. Ab-initio and many-body calculations confirm an increase inthe bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing theamount of oxygen and reducing the amount of sulfur.

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$