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This study represents a comparison of the border trap behavior and reliability between HfO 2 and ZrO 2 films on n -In 0.53 Ga 0.47 As with an Al 2 O 3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N 2 :H 2 mixed FGA passivates the border trap quite well, whereas N 2 -based RTA performs better on interface traps. Al 2 O 3 /HfO 2 showed more degradation in terms of the threshold voltage shift while Al 2 O 3 /ZrO 2 showed higher leakage current behavior. Moreover, Al 2 O 3 /ZrO 2 showed a higher permittivity, hysteresis, and breakdown field than Al 2 O 3 /HfO 2 .

Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress