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Metal atoms were deposited on an Si (111)-7 × 7 surface, and they were adsorbed with alcohol gases (CH 3 OH/C 2 H 5 OH/C 3 H 7 OH). Initially, C n H 2n+1 OH adsorption was simply used as an intermediate layer to prevent the chemical reaction between metal and Si atoms. Through scanning tunneling microscopy (STM) and a mass spectrometer, the C n H 2n+1 OH dissociation process is further derived as the construction of a surface quasi-potential with horizontal and vertical directions. With the help of three typical metal depositions, the surface characteristics of CH 3 OH adsorption are more clearly presented in this paper. Adjusting the preheating temperature, the difference of thermal stability between CH 3 O - and H + could be obviously derived in Au deposition. After a large amount of H + was separated, the isolation characteristic of CH 3 O - was discussed in the case of Fe deposition. In the process of building a new metal-CH 3 O - -H + model, the dual characteristics of CH 3 OH were synthetically verified in Sn deposition. CH 3 O - adsorption is prone to influencing the interaction between the metal deposition and substrate surface in the vertical direction, while H + adsorption determines the horizontal behavior of metal atoms. These investigations lead one to believe that, to a certain extent, the formation of regular metal atomic structures on the Si (111)-7 × 7-CH 3 OH surface is promoted, especially according to the dual characteristics and adsorption models we explored.

Exploring the Dual Characteristics of CH3OH Adsorption to Metal Atomic Structures on Si (111)-7 × 7 Surface