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The leaching of chalcopyrite under different redox potentials was studied with a redox potential controlling device based on microcontroller technology. The leaching test was carried out in a 500 mL flask with 4 g pure chalcopyrite and 200 mL sulfuric acid. The additional total Fe concentration was 0.1 mol/kg, and the initial pH was 0.7. Chalcopyrite leaching tests with initial redox potential of 400 mV and 600 mV (vs. Ag/AgCl, the same below) and controlled redox potential of 350 mV, 400 mV, 450 mV, 500 mV, and 600 mV were carried out at a temperature of 60 °C and a stirring speed of 300 rpm. The results showed that the dissolution of chalcopyrite could not be hindered until the granular intermediates (S0 and Sn2−) accumulated to a certain amount on the chalcopyrite surface. The main passivating species in chalcopyrite dissolution may be iron-deficient polysulfides. At 400 mV, the chalcopyrite passivation by polysulfides was overcome by the galvanic effect between pyrite and chalcopyrite, and the chalcopyrite was rapidly oxidized with Cu leaching rate reaching up to 32% in 7 h, while it was only 15% in the other experimental groups. However, at 450–500 mV, pyrite was oxidized and the galvanic effect between chalcopyrite and pyrite was destroyed, leading to a significant decrease in Cu leaching rate. When the redox potential was 600 mV, the dissolution of metal-deficient polysulfides was promoted; thus, the passivation was weakened.

Control of the Redox Potential by Microcontroller Technology: Researching the Leaching of Chalcopyrite