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We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWHM) values for O 2 /Ar ratios between 30% and 60% are consistent, with a mean of 0.325° and a standard deviation of 0.03°. This is largely attributed to the smaller lattice mismatch of 5% between the ZnO (002) and SiC (111) films. The quality of the ZnO films deteriorated at the post-annealing treatment of 800 °C, as demonstrated by the increasing value of FWHM diffraction peaks, the reducing value of the peak intensity, the reducing percentage of (002) oriented area under the curve, and the increasing value of biaxial stress. We propose a simple growth model to explain the result.

RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates