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Copper (Cu) removal efficiency is a key parameter in the processing of Cu-based electronic devices. Herein, a nitrogen plasma-assisted picosecond (ps) laser process for Cu removal is presented. Based on the cleaning and activation effect of nitrogen plasma on the surface of Cu film in ps-laser ablation, the removal efficiency can be significantly improved. Theoretically, the interaction mechanism between Cu and the ps-laser under the action of the plasma flow field is investigated by the dual temperature model (TTM) and finite element analysis (FEA). Meanwhile, the experimental results show that the angle of the plasma flow significantly affects the laser ablation of Cu. Small-angle plasma helps to improve the ps-laser processing precision of Cu, while large-angle plasma can effectively improve the ps-laser processing efficiency of Cu. Under the laser fluence of 2.69 J/cm 2 , the removal depth of the Cu film by a 30° plasma-assisted ps-laser is 148% higher than that by the non-plasma-assisted ps-laser, which indicates the application potential of nitrogen plasma in improving the laser ablation process.

High-Efficiency Copper Removal by Nitrogen Plasma-Assisted Picosecond Laser Processing