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Due to the high manufacturing cost of memristors, an equivalent emulator has been employed as one of the mainstream approaches of memristor research. A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is proposed, with the core part being the R-HBT network composed of transistors. The advantage of the NDR-based memristor emulator is the controllable threshold, where the state of the memristor can be changed by setting the control voltage, which makes the memristor circuit design more flexible. The operation frequency of the memristor emulator is about 250 kHz. The experimental results prove the feasibility and correctness of the threshold-controllable memristor emulator circuit.

Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics