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This work simulates the plowing process of a single asperity GaAs by diamond indenter using molecular dynamics simulations. The deformation mechanism of asperity GaAs is revealed by examining the topography evolution and stress state during the plowing. This work also investigates the origin of the influence of asperity size, indenter radius and plow depth on the deformation of the asperity GaAs. We observed the initiation and propagation of cracks up to the onset of fracture and the plastic activity near the indenter, obtaining more information usually not available from planar GaAs in normal velocity plowing compared to just plastic activity. The simulations demonstrated the direct evidence of cracking in GaAs induced by plowing at an atomic level and probed the origin and extension of cracking in asperity GaAs. This finding suggests that cracking appears to be a new deformation pattern of GaAs in plowing, together with dislocation-dominated plasticity modes dominating the plowing deformation process. This work offers new insights into understanding the deformation mechanism of an asperity GaAs. It aims to find scientific clues for understanding plastic removal performed in the presence of cracking.

The Dislocation- and Cracking-Mediated Deformation of Single Asperity GaAs during Plowing Using Molecular Dynamics Simulation