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Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF x ) as the resistive switching layer are reported. The electroforming-free MgF x based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10 2 and good data retention of &gt;10 4 s. The resistive switching mechanism in the Ti/MgF x /Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF x layer. In addition, filamentary switching mode at the interface between the MgF x and Ti layers is assisted by O-H group-related defects on the surface of the active layer.

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride