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Field-effect transistors (FETs) are attractive biosensor platforms for rapid and accurate detection of various analytes through surface immobilization of specific bio-receptors. Since it is difficult to maintain the electrical stability of semiconductors of sensing channel under physiological conditions for long periods, passivation by a stable metal oxide dielectric layer, such as Al 2 O 3 or HfO 2 , is currently used as a common method to prevent damage. However, protecting the sensing channel by passivation has the disadvantage that the distance between the target and the conductive channel increases, and the sensing signal will be degraded by Debye shielding. Even though many efforts use semiconductor materials directly as channels for biosensors, the electrical stability of semiconductors in the physiological environments has rarely been studied. In this work, an In 2 O 3 nanolines FET device with high robustness in artificial physiological solution of phosphate buffered saline (PBS) was fabricated and used as a platform for biosensors without employing passivation on the sensing channel. The FET device demonstrated reproducibility with an average threshold voltage (V TH ) of 5.235 V and a standard deviation (SD) of 0.382 V. We tested the robustness of the In 2 O 3 nanolines FET device in PBS solution and found that the device had a long-term electrical stability in PBS with more than 9 days' exposure. Finally, we demonstrated its applicability as a biosensor platform by testing the biosensing performance towards miR-21 targets after immobilizing the phosphonic acid terminated DNA probes. Since the surface immobilization of multiple bioreceptors is feasible, we demonstrate that the robust In 2 O 3 FET device can be an excellent biosensor platform for biosensors.

Fabrication of a Robust In2O3 Nanolines FET Device as a Biosensor Platform