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The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400-1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbon tetrafluoride (CF 4 ) gas was used as the etching gas and injected into the vacuum chamber. The impedance was changed with time, and the coil voltage and current were changed to follow it. During the discharge, about 3 kW of power was applied. The electron temperature and plasma density were measured by the double probe method. The plasma density in the etching region was 10 18 -10 19 m -3 . The target current increased with t burst width. The etching rate of Ar discharge at burst width of 1000 µs was 0.005 µm/min. Adding CF 4 into Ar, the etching rate became 0.05 µm/min, which was about 10 times higher. The etching rate increased with burst width.

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma