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Deep reactive ion etching (DRIE) with the Bosch process is one of the keyprocedures used to manufacture micron-sized structures for MEMS andmicrofluidic applications in silicon and, hence, of increasing importance forminiaturization in biomedical research. While guaranteeing high aspect ratiostructures and providing high design flexibility, the etching procedure suffersfrom reactive ion etching lag and often relies on complex oxide masks to enabledeep etching. In this work, we introduce an optimized Bosch process thatreduces the etch lag to below 1.5 %. Furthermore, we improved a three-stepBosch process, allowing the fabrication of structures with 6 micrometrethickness at depths up to 180 micrometre while maintaining their stability.

Reduced etch lag and high aspect ratios by deep reactive ion etching (DRIE)