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Two-dimensional (2D) MoS 2  have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS 2  exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS 2  radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS 2  RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency ( f  T ) and maximum oscillation frequency ( f  max ) increased with reducing gate lengths. From transistors with a gate length of 0.3 μm, we demonstrated an extrinsic  f  T  of 4 GHz and  f  max  of 10 GHz. Furthermore, statistical analysis of 14 flexible MoS 2  RF transistors is presented in this work. The study of a flexible mixer demonstrates the dependence of conversion gain versus gate voltage, LO power and input signal frequency. These results present the potential of CVD bilayer MoS 2  for future flexible high-frequency electronics.

High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics