English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

For improving retention characteristics in the NOR flash array, aluminum oxide (Al 2 O 3 , alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO 2 /Al 2 O 3 /SiO 2 , which take advantage of higher permittivity and higher bandgap of Al 2 O 3 compared to SiO 2 and silicon nitride (Si 3 N 4 ). By adopting the proposed tunneling layers in the NOR flash array, the threshold voltage window after 10 years from programming and erasing (P/E) was improved from 0.57 V to 4.57 V. In order to validate our proposed device structure, it is compared to another stacked-engineered structure with SiO 2 /Si 3 N 4 /SiO 2 tunneling layers through technology computer-aided design (TCAD) simulation. In addition, to verify that our proposed structure is suitable for NOR flash array, disturbance issues are also carefully investigated. As a result, it has been demonstrated that the proposed structure can be successfully applied in NOR flash memory with significant retention improvement. Consequently, the possibility of utilizing HfO 2 as a charge-trapping layer in NOR flash application is opened.

micromachines

Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide