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The suitability of Ti as a band gap modifier for $\alpha$-Ga$_2$O$_3$ wasinvestigated, taking advantage of the isostructural {\alpha}-phases and highband gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films ofTi:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layerdeposition on sapphire substrates, were characterized to determine howcrystallinity and band gap vary with composition for this alloy. The depositionof crystalline $\alpha$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%,was demonstrated. At greater Ti concentration, the films became amorphous.Modification of the band gap over a range of ~ 270 meV was achieved across thecrystalline films and a maximum change in band gap from pure$\alpha$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Tifraction (61% Ti relative to Ga). The ability to maintain a crystalline phaseat low fractions of Ti, accompanied by a significant modification in band gapshows promise for band gap engineering and the enhancement in versatility ofapplication of $\alpha$-Ga$_2$O$_3$ in optoelectronic devices.

Ti alloyed $\alpha$-Ga$_2$O$_3$: route towards wide band gap engineering