English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15-500 nm) and surface roughness (0.3-1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding